【Granted Patent】Congratulations! Professor Lin Weizhi have been granted an invention patent for "Harvesting Device."
| Inventor | Professor Lin Weizhi |
|
Department |
Department of Mechanical and Electrical Engineering |
| Patent Name | Harvesting Device |
| Patent Number | I857874 |
| Issue Date |
2024/10/01 |
|
Abstract |
A method for fabricating an InGaN quantum well structure can control the indium content by adjusting the growth temperature of the InGaN quantum well, thereby growing InGaN quantum well grains with different light colors from a single material. The method includes forming a GaN microdisk crystal on a substrate. The GaN microdisk crystal has an inverted pyramidal shape and an end face; and forming multiple quantum well layers on the end face. Each quantum well layer includes an InGaN quantum well and a barrier layer. The InGaN quantum well is grown at a growth temperature adjusted by a trend equation within a range of 480°C to 810°C. |
|
Contact Person |
Ms. Zhuo Yuyun, Email: chosml@mail.nsysu.edu.tw (Ext. 2627) Mr. Shi Yuxiang, Email: seanshih@mail.nsysu.edu.tw (Ext. 2625) |
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