【獲證專利公告】恭賀! 物理系張鼎張教授及團隊之研究成果「電阻式記憶體」獲得美國發明專利
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發明人 |
張鼎張教授 |
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系所 |
物理系 |
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專利名稱 |
電阻式記憶體/RESISTIVE RANDOM ACCESS MEMORY |
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證書號 |
US10,461,252 B2 |
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公告日期 |
108年10月29日 |
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專利摘要 |
A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.
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技轉服務窗口 |
曾溫仁(分機2621) |
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