【獲證專利公告】恭賀! 光電系邱逸仁教授及團隊之研究成果「波導構造的製作方法」獲得美國發明專利!
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發明人 |
邱逸仁教授 |
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系所 |
光電系 |
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專利名稱 |
波導構造的製作方法 |
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證書號 |
US9,946,021B1 |
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公告日期 |
107年4月17日 |
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專利摘要 |
A method for fabricating a waveguide construction is described and has steps of: providing a layered structure by: forming a first-type InGaAsP layer on a substrate, forming a first-type InP layer on the first-type InGaAsP layer, forming an active layer containing gallium on the first-type InP layer, forming a second-type InP layer on the active layer, and forming a second-type InGaAsP layer on the second-type InP layer; forming an SiO2 patterned layer having SiO2 regions and at least one channel facing toward a desired direction and formed between the SiO2 regions on the second-type InGaAsP layer; and performing a rapid thermal annealing treatment on the layered structure formed with the SiO2 patterned layer. The rapid thermal annealing treatment has a treating temperature between 720° C. and 760° C. and a treating time between 60 and 240 seconds.
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技轉服務窗口 |
莊淨智(分機2625) |
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