【獲證專利公告】恭賀! 物理系張鼎張教授及團隊之研究成果「電阻式記憶體」獲得美國發明專利!
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發明人 |
張鼎張教授 |
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系所 |
物理系 |
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專利名稱 |
電阻式記憶體 |
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證書號 |
US9,935,265 B2 |
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公告日期 |
107年4月3日 |
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專利摘要 |
A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.
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技轉服務窗口 |
曾溫仁(分機2621) |
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