【獲證專利公告】恭賀! 物理系張鼎張教授及團隊之研究成果「低耗電量之電阻式記憶體」獲得美國發明專利!!
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發明人 |
張鼎張教授 |
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系所 |
物理系 |
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專利名稱 |
低耗電量之電阻式記憶體 |
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證書號 |
US9,853,214B2 |
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公告日期 |
106年12月26日 |
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專利摘要 |
A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.
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技轉服務窗口 |
曾溫仁(分機2621) |
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