【獲證專利公告】恭賀!物理系張鼎張教授及團隊之研究成果「具有穩定成形電壓的電阻式記憶體」獲得美國發明專利!
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發明人 |
張鼎張教授 |
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系所 |
物理系 |
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專利名稱 |
具有穩定成形電壓的電阻式記憶體 |
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證書號 |
US 9,711,720B2 |
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公告日期 |
106年7月18日 |
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專利摘要 |
A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.
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技轉服務窗口 |
曾溫仁(分機2621) |
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