【獲證專利公告】恭賀!物理系張鼎張教授及團隊之研究成果「電阻式記憶體及其製作方法」獲得美國發明專利!!
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發明人 |
張鼎張教授 |
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系所 |
物理系 |
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專利名稱 |
電阻式記憶體及其製作方法 |
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證書號 |
US 9,685,610B2 |
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公告日期 |
106年6月20日 |
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專利摘要 |
A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
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技轉服務窗口 |
曾溫仁(分機2621) |
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