【獲證專利公告】恭賀!物理系張鼎張教授及團隊之研究成果「電阻式記憶體及其製作方法」獲得美國發明專利!
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發明人 |
張鼎張教授 |
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系所 |
物理系 |
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專利名稱 |
電阻式記憶體及其製作方法 |
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證書號 |
US 9,496,493B2 |
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公告日期 |
105年11月15日 |
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專利摘要 |
A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
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技轉服務窗口 |
曾溫仁(分機2621) |
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