【Granted Patent】Congratulations to Prof. Lo I-Kai on the grant of U.S. patent for “Method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid”
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Inventor |
Professor Lo, I-Kai |
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Department |
Department of Physics |
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Title |
Method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid |
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Patent No. |
US 10,811,559 B2 |
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Issued Date |
Oct. 20, 2020 |
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Abstract |
A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1. |
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Contact Person |
Ian Fan (ext.2627) ianfanATmail.nsysu.edu.tw |
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