【Granted Patent】Congratulations to Prof. Chang Ting-Chang on the grant of U.S. patent for “Resitive random access memory”
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Inventor |
Professor Chang, Ting-Chang |
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Department |
Department of Physics |
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Title |
Resitive random access memory |
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Patent No. |
US10,461,252 B2 |
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Issued Date |
Oct. 29, 2019 |
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Abstract |
A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.
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Contact Person |
Shu-Ying LIN (ext.2686) |
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